供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRF7821PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7821TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
VishaySI4425DDY-T1-GE3
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
描述
由其分销商提供的 onsemi FDS4675 的描述。
P-Channel PowerTrench® MOSFET, 40V, -11A, 13mΩ
P-Channel 40 V 13 mOhm PowerTrench Mosfet SOIC-8
ON SEMICONDUCTOR - FDS4675 - Power MOSFET, P Channel, 40 V, 11 A, 0.013 ohm, SOIC, Surface Mount
MOSFET, P, SMD, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:2.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Package / Case:SOIC; Power Dissipation Pd:2.4W; Termination Type:SMD; Voltage Vds Typ:-40V; Voltage Vgs Max:-1.4V; Voltage Vgs Rds on Measurement:-10V
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)-40 V
Dual Supply Voltage-40 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.35 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-1.4 V
Number of Channels1
Number of Elements1
Power Dissipation2.4 W
Rds On Max13 mΩ
Resistance13 MΩ
Rise Time29 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.4 V
Turn-Off Delay Time95 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-40 V
Dimensions
Height1.75 mm
Length4.9 mm
Width3.9 mm