Infineon IRF6711STR1PBF

Name: Infineon IRF6711STR1PBF
Brand: Infineon
SKU: IRF6711STR1PBF

Power Field-Effect Transistor, 84A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 2.11

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6711STR1PBF	0	1K	Bulk				2.110	1.750	7h
Component Stockers USA	IRF6711STR1PBF	484			99.990	99.990	99.990	99.990	99.990	>1wk
Worldway Electronics	IRF6711STR1PBF	9,508	7	Tape & Reel		0.569	0.552	0.523	0.523	1d
Klychip	IRF6711STR1PBF	联系方式	1							>1w
QUARKTWIN TECHNOLOGY LTD	IRF6711STR1PBF	联系方式								>1wk

数据表和文档

下载 Infineon IRF6711STR1PBF 的数据表和制造商文档。

IHS

Datasheet9 页16 年前

供应链

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-06-20

LTD Date2014-12-20

描述

由其分销商提供的 Infineon IRF6711STR1PBF 的描述。

Power Field-Effect Transistor, 84A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

Trans MOSFET N-CH Si 25V 19A 6-Pin Direct-FET SQ T/R

Verical

MOSFET; 25V; 12.000A; DIRECTFET | Infineon IRF6711STR1PBF

RS (Formerly Allied Electronics)

N Channel, MOSFET, 25V, 12A, DirectFET S1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

Newark

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier