供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-02-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
相关零件
InfineonIRF6711STR1PBF
Power Field-Effect Transistor, 84A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Infineon IRFH4255DTRPBF 的描述。
25V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package, PG-TISON-8, RoHS
Infineon SCT
MOSFET, 25V, 30A POWER BLOCK IN PQFN 5X6 PACKAGE
Trans MOSFET N-CH 25V 64A/105A 8-Pin QFN EP T/R
Benefits: Control and synchronous MOSFETs in one package; Low charge control MOSFET (10nC typical); Low RDSON synchronous MOSFET (less than 2.10mOhms); Intrinsic Schottky Diode with Low Forward Voltage on Q2; RoHS Compliant; Halogen-Free; MSL1; Industrial Qualification; FastIRFET
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.314 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance2.1 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation31 W
Rds On Max3.2 mΩ
Schedule B8541290080
Threshold Voltage1.6 V
Turn-On Delay Time10 ns
Dimensions
Height1 mm
Length6 mm
Width5 mm