价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRFH7932TRPBF | 2,998 | 1 | |||||||||
| Rochester Electronics | IRFH7932TRPBF | 20,084 | 22h | |||||||||
| RS (Formerly Allied Electronics) | IRFH7932TRPBF | 0 | 4K | Bulk | 15h | |||||||
| Farnell | IRFH7932TRPBF | 2,711 | 1 | Cut Tape | 22h | |||||||
| Mouser | 942-IRFH7932TRPBF | 4,417 | 1 | Tape & Reel |
备用零件
Price @ 1000
$ 0.55
$ 0.53
Stock
1,047,270
20,440
Authorized Distributors
5
2
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
24 A
25 A
Threshold Voltage
1.8 V
1.8 V
Rds On Max
3.3 mΩ
3.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.4 W
3.1 W
Input Capacitance
4.27 nF
4.27 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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描述
由其分销商提供的 Infineon IRFH7932TRPBF 的描述。
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
Infineon SCT
Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Transistor MOSFET N-CH 30V 25A 8-Pin QFN T/R
Avnet Japan
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24mA; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
MOSFET, N, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:PQFN; Power Dissipation Pd:3.4W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.27 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.4 W
Rds On Max3.3 mΩ
Rise Time48 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time23 ns
Turn-On Delay Time20 ns
Dimensions
Height1 mm
Length6.096 mm
Width5.1 mm