Infineon IRF6620TRPBF

Name: Infineon IRF6620TRPBF
Brand: Infineon
SKU: IRF6620TRPBF

Single N-Channel 20 V 2.7 mOhm 42 nC HEXFET® Power Mosfet - DirectFET®

$ 1.124

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF6620TRPBF	3	1		1.583	1.583	1.583	1.583	1.583
Rochester Electronics	2	IRF6620TRPBF	497					0.801	0.665	0.593	23m
RS (Formerly Allied Electronics)		IRF6620TRPBF	0	4800	Bulk					3.770	14h
Farnell	2	IRF6620TRPBF	0	1	Cut Tape	1.407*	1.265*	1.028*	0.682*	0.669*	1d
HQonline		DS0077620	2	1		3.829	3.303	2.990	2.990	2.990	>1w

数据表和文档

下载 Infineon IRF6620TRPBF 的数据表和制造商文档。

Newark

Datasheet9 页20 年前

Datasheet8 页20 年前

IHS

iiiC

库存历史记录

3 个月趋势:

-14.29%

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EE Concierge	符号封装

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InfineonIRF6620TRPBF

InfineonIRF6620TR1PBF

Price @ 1000

$ 1.124

$ 2.99

Stock

1,876,886

230,076

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

27 A

Threshold Voltage

Rds On Max

2.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.8 W

89 W

Input Capacitance

4.13 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-01-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-03-31

LTD Date2023-09-30

描述

由其分销商提供的 Infineon IRF6620TRPBF 的描述。

Single N-Channel 20 V 2.7 mOhm 42 nC HEXFET® Power Mosfet - DirectFET®

Future Electronics

Transistor MOSFET N-CH 20V 150A 7-Pin DirectFET MX T/R

Avnet Japan

Trans MOSFET N-CH 20V 27A 7-Pin Direct-FET MX T/R 4.8k Pb Free

Avnet

A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes., MG-WDSON-5, RoHS

Infineon SCT

MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC

Digi-ic_SMART PIONEER

Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon NMOS HEXFET, Vds=20 V, 150 A, direct

UnikeyIC

IRF6620 - 12V-300V N-CHANNEL POW

ODG (Origin Data Global)

MOSFET, N-CH, 20V, 150A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 150A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.45V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell