供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-09-19
LTD Date2013-03-19
相关零件
InfineonIPB80N04S404ATMA1
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
InfineonAUIRFS8403
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
描述
由其分销商提供的 Infineon IRF3711STRLPBF 的描述。
Single N-Channel 20 V 6 mOhm 44 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK T/R
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 20V, 110A, 6 MOHM, 29 NC QG, D2-PAK
Power Field-Effect Transistor, 75A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating110 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)20 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.98 nF
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation120 W
Rds On Max6 mΩ
Resistance6 MΩ
Rise Time220 ns
Voltage Rating (DC)20 V