Infineon IRF6614TR1PBF

Name: Infineon IRF6614TR1PBF
Brand: Infineon
SKU: IRF6614TR1PBF

MOSFET N-CH 40V 12.7A DIRECTFET / Trans MOSFET N-CH Si 40V 12.7A 7-Pin Direct-FET ST T/R

$ 2.36

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF6614TR1PBF	0	1K	Bulk				2.360	1.980	1d
Farnell	2	IRF6614TR1PBF	0	1	Cut Tape	1.172*	1.172*	1.132*	0.971*	0.971*	21h
Component Stockers USA		IRF6614TR1PBF	402			99.990	99.990	99.990	99.990	99.990	>1wk
Win Source		WS-IRF6614TR1PBF	11,810	4			11.886	9.657	9.657	9.657	23h
Worldway Electronics		IRF6614TR1PBF	14,891	7	Tape & Reel		1.545	1.497	1.419	1.419	21h

数据表和文档

下载 Infineon IRF6614TR1PBF 的数据表和制造商文档。

IHS

Datasheet10 页20 年前

Datasheet0 页0 年前

Newark

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-11-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-06-20

LTD Date2014-12-20

描述

由其分销商提供的 Infineon IRF6614TR1PBF 的描述。

MOSFET N-CH 40V 12.7A DIRECTFET / Trans MOSFET N-CH Si 40V 12.7A 7-Pin Direct-FET ST T/R

Win Source

MOSFET, N-Ch, VDSS 40V, RDS(ON) 5.9 mOhm, ID 12.7A, DirectFET

RS (Formerly Allied Electronics)

MOSFET N-CH 40V 12.7A DIRECTFET

DigiKey

Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, N, DIRECTFET, 40V, ST; Transistor Polarity:N Channel; Continuous Drain Current Id:12.7A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.1mW; Transistor Case Style:ST; No. of Pins:5; SVHC:No SVHC (18-Jun-2012); Base Number:6614; Current Id Max:10.1A; Package / Case:ST; Power Dissipation Pd:2.1mW; Pulse Current Idm:102A; SMD Marking:2.1; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V

element14 APAC