Infineon IRF630NPBF

Name: Infineon IRF630NPBF
Brand: Infineon
SKU: IRF630NPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.3 Ohm; Id 9.3A; TO-220AB; Pd 82W; Vgs +/-20V

$ 0.467

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Distributor		SKU		Min	Pkg
Avnet		IRF630NPBF	70	50				0.363	0.346	0.346	3d
Future Electronics	2	IRF630NPBF	29,388	50	Tube			0.735	0.695	0.660
Arrow Electronics	3	IRF630NPBF	8,022	1		0.578	0.578	0.520	0.452	0.445
Rutronik		TMOSP11832	3,250	50				0.331	0.265	0.265	14h
Rochester Electronics		IRF630NPBF	1,545					0.563	0.467	0.416	7h

数据表和文档

下载 Infineon IRF630NPBF 的数据表和制造商文档。

Newark

Datasheet11 页15 年前

Datasheet11 页21 年前

IHS

Factory Futures

iiiC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+26.58%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-09

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

描述

由其分销商提供的 Infineon IRF630NPBF 的描述。

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V

RS (Formerly Allied Electronics)

Transistor: N-MOSFET; unipolar; 200V; 9A; 0.4ohm; 0.57W; -55+150 deg.C; THT; TO220

Maritex

Trans MOSFET N-CH Si 200V 9.3A Automotive 3-Pin(3+Tab) TO-220AB Tube

Verical

Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole

Avnet

200V 9.3A 82W 300m´Î@10V5.4A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 36 W

Distrelec

N Channel Mosfet, 200V, 9.3A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.3A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF630NPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 200V, 9.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.3A; Junction to Case Thermal Resistance A:1.83°C/W; Package / Case:TO-220AB; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC