备用零件
Price @ 1000
$ 1.27
$ 5.78
Stock
209,064
144,715
Authorized Distributors
2
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
-150 V
-150 V
Continuous Drain Current (ID)
11 A
13 A
Threshold Voltage
-4 V
-2 V
Rds On Max
290 mΩ
290 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
83 W
110 W
Input Capacitance
860 pF
860 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-08-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
相关零件
InfineonIRFB4019PBF
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
InfineonIRF3415PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
描述
由其分销商提供的 Infineon IRF6215PBF 的描述。
Single P-Channel 150 V 0.29 Ohm 66 nC HEXFET® Power Mosfet - TO-220-3
-150 Volt -13 Amp Single P-Channel A224 HEXFET Power MOSFET TO-220AB
MOSFET, Power; P-Channel; 0.29 Ohms @ -10 V, -6.6 A; 20 V (Max.); 62 degC/W
-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET P-CH 150V 13A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 110 W
Power Field-Effect Transistor, 11A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:310mJ; Current Id Max:-13A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Power Dissipation Ptot Max:110W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds:150V; Voltage Vds Typ:-150V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating-13 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)-150 V
Dual Supply Voltage-150 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance860 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation83 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance290 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation83 W
Rds On Max290 mΩ
Recovery Time240 ns
Resistance290 mΩ
Rise Time36 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-150 V
Dimensions
Height19.8 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm