Infineon IRFSL3607PBF

Name: Infineon IRFSL3607PBF
Brand: Infineon
SKU: IRFSL3607PBF

Single N-Channel 75 V 9 mOhm 56 nC HEXFET® Power Mosfet - TO-262-3

$ 1.94

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFSL3607PBF	0	10	Bulk		2.200	1.940	1.940	1.940	18h
Win Source	WS-IRFSL3607PBF	50	45				1.155	0.939	0.939	6h
Worldway Electronics	IRFSL3607PBF	19,369	7	Tube		2.056	2.018	1.940	1.901	4h
GreenTree Electronics	IRFSL3607PBF	300								7d
Aztech	IRFSL3607PBF	8,092			0.460	0.460	0.460	0.460	0.460	23h

数据表和文档

下载 Infineon IRFSL3607PBF 的数据表和制造商文档。

IHS

Datasheet11 页14 年前

Datasheet12 页14 年前

Datasheet11 页16 年前

Newark

Farnell

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-14

Lifecycle StatusObsolete (Last Updated: 5 days ago)

描述

由其分销商提供的 Infineon IRFSL3607PBF 的描述。

Single N-Channel 75 V 9 mOhm 56 nC HEXFET® Power Mosfet - TO-262-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

MOSFET, N, TO-262; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:75V; Current, Id Cont:80A; Resistance, Rds On:7.34mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-262; Termination Type:Through Hole; Current, Idm Pulse:310A; Power Dissipation:140W

Farnell