Infineon IRF520NSTRLPBF

Name: Infineon IRF520NSTRLPBF
Brand: Infineon
SKU: IRF520NSTRLPBF

Single N-Channel 100 V 0.2 Ohm 25 nC HEXFET® Power Mosfet - D2PAK

$ 1.05

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF520NSTRLPBF	0	5	Bulk		1.160	1.050	1.050	1.050	13h
Farnell	2	IRF520NSTRLPBF	0	1	Cut Tape	1.982*	1.602*	1.212*	0.791*	0.791*	7h
Microchip USA		IRF520NS	230	3K	Tray					0.745	14h
Win Source	2	WS-IRF520NSTRLPBF	110	110					0.362	0.362	22h
Worldway Electronics	2	IRF520NSTRLPBF	15,415	7	Tape & Reel		0.287	0.278	0.263	0.263	21h

数据表和文档

下载 Infineon IRF520NSTRLPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Farnell

Newark

Burklin Elektronik

International Rectifier

库存历史记录

3 个月趋势:

-100%

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InfineonIRF520NSTRLPBF

InfineonIRF520NSPBF

Price @ 1000

$ 1.05

$ 1.13

Stock

191,376

57,720

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

9.7 A

Threshold Voltage

4 V

Rds On Max

200 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.8 W

Input Capacitance

330 pF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-12-28

LTD Date2013-06-28

描述

由其分销商提供的 Infineon IRF520NSTRLPBF 的描述。

Single N-Channel 100 V 0.2 Ohm 25 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) | MOSFET N-CH 100V 9.7A D2PAK

Win Source

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Infineon Technologies N channel HEXFET power MOSFET, 100 V, 9.7 A, TO-252-3, IRF520NSTRLPBF

Burklin Elektronik

Trans MOSFET N-CH 100V 9.7A 3-Pin(2+Tab) D2PAK T/R

Verical

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:9.7A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon