Infineon IRF520NSPBF

Name: Infineon IRF520NSPBF
Brand: Infineon
SKU: IRF520NSPBF

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

$ 1.13

Obsolete

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF520NSPBF	0	550	Bulk				1.130	1.130	16h
Farnell		IRF520NSPBF	0	1		2.815*	2.815*	1.254*	0.990*	0.990*	9h
Win Source		WS-IRF520NSPBF	69	65				0.939	0.626	0.626	39m
Worldway Electronics		IRF520NSPBF	18,653	7	Tube		0.346	0.335	0.317	0.317	23h
Classic Components	3	IRF520NSPBF	51					3.600	3.600	3.600	15h

数据表和文档

下载 Infineon IRF520NSPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet12 页21 年前

element14 APAC

DigiKey

Newark

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InfineonIRF520NSPBF

InfineonIRF520NSTRLPBF

Price @ 1000

$ 1.13

$ 1.05

Stock

57,720

191,376

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

9.7 A

Threshold Voltage

4 V

Rds On Max

200 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.8 W

Input Capacitance

330 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF520NSPBF 的描述。

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 9.7A 3-Pin(2+Tab) D2PAK

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:9.7A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, 100V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:91mJ; Capacitance Ciss Typ:330pF; Current Iar:5.7A; Current Id Max:9.7A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:3.1°C/W; N-channel Gate Charge:25nC; No. of Transistors:1; On State resistance @ Vgs = 10V:200mohm; Package / Case:D2-PAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:38A; Rise Time:23ns

element14 APAC