供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-07-26
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
相关零件
InfineonIRFZ44NSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20
InfineonIRF4905SPBF
Transistor: P-MOSFET; unipolar; -70V; -44A; 0.02ohm; 170W; -55+150 deg.C; SMD; TO263 (D2PAK)
InfineonAUIRF4905STRL
Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
描述
由其分销商提供的 Infineon IRF4905STRRPBF 的描述。
Single P-Channel 55V 20 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.02Ohm;ID -74A;D2Pak;PD 200W;VGS +/-20V
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH Si 55V 74A 3-Pin(2+Tab) D2PAK T/R
Advanced Process Technology | MOSFET P-CH 55V 42A D2PAK
Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Transistor Polarity:p Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.02Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time96 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity800
Power Dissipation150 W
Rds On Max20 mΩ
Rise Time99 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time51 ns
Turn-On Delay Time20 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm