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Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
描述
由其分销商提供的 Vishay IRFZ48SPBF 的描述。
Trans MOSFET N-CH Si 60V 50A 3-Pin(2+Tab) D2PAK
3.7W(Ta),190W(Tc) 20V 4V@ 250¦ÌA 110nC@ 10 V 1N 60V 18m¦¸@ 43A,10V 50A 2.4nF@25V D2PAK,TO-263 10.67mm*9.65mm*4.83mm
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time250 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Operating Temperature175 °C
Max Power Dissipation190 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.7 W
Rds On Max18 mΩ
Rise Time250 ns
Schedule B8541290080
Turn-Off Delay Time210 ns
Turn-On Delay Time8.1 ns