Infineon IRF4905PBF

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.02Ohm;ID -74A;TO-220AB;PD 200W;VGS +/-20V

Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -74 A, TO-220, IRF4905PBF

Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - TO-220-3

-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Transistor MOSFET P-Ch. -64A/-55V TO220 IRF 4905 PBF

Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole

Trans MOSFET P-CH 55V 74A 3-Pin(3+Tab) TO-220AB

200W 20V 4V 180nC(Max) @ 10V 1P 55V 20m¦¸@ 10V 42A 3.4nF@ 25V D2PAK 9.02mm

HEXFET POWER MOSFET Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

P Channel Mosfet, -55V, 74A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:74A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF4905PBF.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, P, -55V, -74A, TO-220; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:64A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:260A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:150W; Power, Pd:150W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.75°C/W; Transistors, No. of:1; Voltage, Vds:55V; Voltage, Vds Max:55V