Infineon IRFZ46NLPBF

Name: Infineon IRFZ46NLPBF
Brand: Infineon
SKU: IRFZ46NLPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.0165 Ohm; Id 53A; TO-262; Pd 107W; Vgs +/-20V

$ 0.654

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFZ46NLPBF	3,730					0.762	0.633	0.564	7h
RS (Formerly Allied Electronics)	IRFZ46NLPBF	0	700	Bulk				2.810	2.560	1d
Farnell	IRFZ46NLPBF	0	1		1.391*	1.114*	0.798*	0.521*	0.510*	7h
Mouser	942-IRFZ46NLPBF	729	1	Tube	2.160	1.380	0.955	0.675	0.643
Microchip USA	IRFZ46NL	302	600	Tube				1.061	1.061	1d

数据表和文档

下载 Infineon IRFZ46NLPBF 的数据表和制造商文档。

IHS

Datasheet12 页22 年前

Datasheet11 页22 年前

Newark

RS (Formerly Allied Electronics)

DigiKey

库存历史记录

3 个月趋势:

-0.33%

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InfineonIRFZ46NLPBF

InfineonAUIRFZ46NL

Price @ 1000

$ 0.654

$ 2.37

Stock

494,272

56,950

Authorized Distributors

Mount

Through Hole

Case/Package

TO-262

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

39 A

Threshold Voltage

4 V

Rds On Max

16.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.8 W

107 W

Input Capacitance

1.696 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-08-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon IRFZ46NLPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0165Ohm;ID 53A;TO-262;PD 107W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 16.5 mOhm 48 nC HEXFET® Power Mosfet - TO-262

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon