Infineon IRF2903ZPBF

Name: Infineon IRF2903ZPBF
Brand: Infineon
SKU: IRF2903ZPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 2.4MILLIOHMS; Id 260A; TO-220AB; Pd 290W; -55DE

$ 1.61

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRF2903ZPBF	200					1.410	1.260	1.180	14h
RS (Formerly Allied Electronics)	IRF2903ZPBF	0	350	Bulk				3.390	3.390	6h
Farnell	IRF2903ZPBF	0	1		3.958*	3.958*	2.155*	1.897*	1.897*	1d
Mouser	942-IRF2903ZPBF	64	1	Tube	4.150	2.720	2.040	1.610	1.610
Microchip USA	IRF2903ZPBF	396	600	Bulk				1.120	1.120	6h

数据表和文档

下载 Infineon IRF2903ZPBF 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

Datasheet9 页15 年前

Datasheet13 页20 年前

Datasheet12 页15 年前

element14 APAC

iiiC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+0.00%

备用零件

此零件

备用零件

InfineonIRF2903ZPBF

InfineonAUIRF2903Z

Price @ 1000

$ 1.61

$ 1.62

Stock

169,912

65,546

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

75 A

160 A

Threshold Voltage

4 V

2 V

Rds On Max

2.4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

290 W

Input Capacitance

6.32 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-06-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

描述

由其分销商提供的 Infineon IRF2903ZPBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de

RS (Formerly Allied Electronics)

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

IRF2903 Series 30V 75A 290W 2.4mOhm Single N-Channel MOSFET TO220AB

Future Electronics

Trans MOSFET N-CH 30V 260A 3-Pin (3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 260A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Utmel Electronic

Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2.4mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:3-TO-220; No. of Pins:3 ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon