价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF3709SPBF | 0 | 3200 | Bulk | 17h | |||||||
| Farnell | IRF3709SPBF | 0 | 1 | 10h | ||||||||
| Microchip USA | IRF3709SPBF | 270 | 600 | Bulk | 17h | |||||||
| Win Source | WS-IRF3709SPBF | 8,010 | 45 | 2h | ||||||||
| Worldway Electronics | IRF3709SPBF | 8,862 | 7 | Tube | 1d |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-02-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
相关零件
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MOSFET N-CH 30V 90A D2PAK / Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK T/R
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STMicroelectronicsSTB85NF3LLT4
N-Channel 30V - 0.006Ohm - 85A - D2PAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
描述
由其分销商提供的 Infineon IRF3709SPBF 的描述。
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 6.4Milliohms;ID 90A;D2Pak;PD 120W;VGS +/-20
Single N-Channel 30 V 9 mOhm 27 nC HEXFET® Power Mosfet - D2PAK
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating90 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time9.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.672 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.1 W
Rds On Max9 mΩ
Resistance9 MΩ
Rise Time171 ns
Threshold Voltage3 V
Turn-Off Delay Time21 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm