Infineon IRF130

Name: Infineon IRF130
Brand: Infineon
SKU: IRF130

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

$ 18.605

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Future Electronics		IRF130	0	100	Bulk			19.200	19.200	19.200
Arrow Electronics		IRF130	0	100				18.010	18.010	18.010
Farnell		IRF130	0	1		17.974*	14.159*	12.050*	11.553*	11.553*	12h
Component Stockers USA		IRF130	5,625			0.220	0.220	0.210	0.200	0.200	>1wk
Classic Components	2	IRF130	51					22.740	22.740	22.740	1d

数据表和文档

下载 Infineon IRF130 的数据表和制造商文档。

Newark

Datasheet7 页25 年前

IHS

B+D Enterprises

CAD 模型

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InfineonIRF130

InfineonJANTX2N6756

Price @ 1000

$ 18.605

$ 27.405

Stock

14,405

8,362

Authorized Distributors

Mount

Through Hole

Case/Package

TO-3

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

14 A

Threshold Voltage

Rds On Max

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

75 W

Input Capacitance

供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF130 的描述。

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Infineon

100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2

Infineon SCT

IRF130 Series 100 V 0.18 Ohm 12 nC Through Hole N-Channel Power MOSFET - TO-3

Future Electronics

Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-204AE

Verical

45 A 100 V 0.21 ohm N-CHANNEL Si POWER MOSFET TO-3

Component Stockers USA

HEXFET, Hi-Rel 100V, 14A, 0.180 ohm

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

IHS

N CH MOSFET, 100V, 14A, TO-204AA; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:75W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC