Infineon IPP65R110CFDXKSA1

Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-220 Tube
$ 3.06
Obsolete
制造商页面数据表

价格与库存

数据表和文档

下载 Infineon IPP65R110CFDXKSA1 的数据表和制造商文档。

IHS

Datasheet20 页14 年前

TME

库存历史记录

3 个月趋势:
+8.55%
Powered bySpectra logo

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IPP65R110CFDXKSA1 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
EE Concierge
符号封装
下载 CAD 模型时，合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件
备用零件
InfineonIPP65R110CFDXKSA1
InfineonIPP65R110CFDAAKSA1
Price @ 1000
$ 3.06
$ 3.205
Stock
38,720
228,358
Authorized Distributors
1
5
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
31.2 A
31.2 A
Threshold Voltage
-
-
Rds On Max
110 mΩ
110 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
277.8 W
277.8 W
Input Capacitance
3.24 nF
3.24 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-15
Lifecycle StatusObsolete (Last Updated: 5 months ago)

相关零件

InfineonIPP65R099C6XKSA1
MOSFET N-CH 650V 38A TO220-3 / N-Channel 650 V 38A (Tc) 278W (Tc) Through Hole PG-TO220-3
详细信息
STMicroelectronicsSTP45N65M5
N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package
详细信息
InfineonIPP65R095C7XKSA1
128W 20V 4V 45nC@ 10V 1N 650V 95m¦¸@ 10V 24A 2.14nF@ 400V TO-220 10mm*4.4mm*15.65mm
详细信息
STMicroelectronicsSTP38N65M5
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package
详细信息
STMicroelectronicsSTP34N65M5
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-220 package
详细信息
InfineonIPP60R099CPXKSA1
255W(Tc) 20V 3.5V@1.2mA 80nC@ 10 V 1N 600V 99m¦¸@ 18A,10V 31A 2.8nF@100V TO-220,TO-220-3 9.45mm
详细信息

描述

由其分销商提供的 Infineon IPP65R110CFDXKSA1 的描述。

Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-220 Tube
Verical
277.8W(Tc) 20V 4.5V@1.3mA 118nC@ 10 V 1N 700V 110m¦¸@ 12.7A,10V 31.2A 3.24nF@100V TO-220 4.57mm
Unikeyic (ICkey)
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
Mosfet, N-Ch, 650V, 31.2A, 277.8W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IPP65R110CFDXKSA1
Newark
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Infineon

图片

element14 APAC
TME
Rochester Electronics

制造商别名

Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

零件编号别名

该零件可能有以下备用零件编号：

  • SP000895226