供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-20
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2020-03-15
LTD Date2020-09-15
相关零件
InfineonAUIRFU1010Z
MOSFET N-CH 55V 91A IPAK / MOSFET Automotive MOSFET 55V,91A, 7.5 mOhm, 63 nC Qg, IPAK
描述
由其分销商提供的 Infineon IPI80N06S2L11AKSA2 的描述。
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube
55V, N-Ch, 11 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™, PG-TO262-3-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance14.7 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.075 nF
Max Dual Supply Voltage55 V
Max Operating Temperature175 °C
Max Power Dissipation158 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance11 mΩ
Package Quantity500
Power Dissipation158 W
Rds On Max10.7 mΩ
Rise Time32 ns
Turn-Off Delay Time46 ns
Turn-On Delay Time11 ns
合规
环境分类
China RoHSNon-Compliant
Halogen FreeHalogen Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
合规声明