价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IPI60R199CPXKSA1 | 0 | 500 | 2d | ||||||||
| Microchip USA | IPI60R199CPXKSA1 | 174 | 150 | Tube | 16h | |||||||
| Win Source | WS-IPI60R199CP | 6,000 | 30 | 23h | ||||||||
| Worldway Electronics | IPI60R199CPXKSA1 | 16,355 | 7 | Tube | 22h | |||||||
| IC Components Ltd. | IPI60R199CP | 1,834 | 1d |
供应链
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
STMicroelectronicsSTI21N65M5
N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in I2PAK package
描述
由其分销商提供的 Infineon IPI60R199CPXKSA1 的描述。
Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; Current Id Max:16A; Package / Case:TO-262; Power Dissipation Pd:139W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Resistance199 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.52 nF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation139 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance200 mΩ
Package Quantity500
Power Dissipation139 W
Rds On Max199 mΩ
Rise Time5 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)650 V