供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-29
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2012-11-10
LTD Date2013-05-10
相关零件
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描述
由其分销商提供的 STMicroelectronics STI26NM60N 的描述。
N-channel 600 V, 0.135 Ohm, 20 A MDmesh(TM) II Power MOSFET I2PAK
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
IC ADC CMOS 10BIT 1.8V 257-BGA
MOSFET, N CH, 600V, 20A, I2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage600 V
Number of Elements1
Rds On Max165 mΩ
Turn-Off Delay Time85 ns
Turn-On Delay Time13 ns
Dimensions
Height10.75 mm
Length10.4 mm
Width4.6 mm