Infineon IPI086N10N3GXKSA1

Name: Infineon IPI086N10N3GXKSA1
Brand: Infineon
SKU: IPI086N10N3GXKSA1

Trans MOSFET N-CH 100V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

$ 0.703

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Distributor		SKU		Min	Pkg
Newark		IPI086N10N3GXKSA1	111	1		2.270	1.630	0.987	0.724	0.642
Rochester Electronics		IPI086N10N3GXKSA1	465					0.847	0.703	0.626	2h
DigiKey		IPI086N10N3GXKSA1-ND	28	1	Tube	2.830	2.830	1.235	0.906	0.721
Arrow Electronics	2	IPI086N10N3GXKSA1	175	1		2.039	2.039	0.986	0.986	0.986
Avnet		IPI086N10N3GXKSA1	0	1K					0.622	0.544	1d

数据表和文档

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IHS

Datasheet12 页12 年前

Factory Futures

iiiC

库存历史记录

3 个月趋势:

+8.68%

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-02-17

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IPI086N10N3GXKSA1 的描述。

Trans MOSFET N-CH 100V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Verical

Power MOSFET, N Channel, 100 V, 80 A, 0.0074 ohm, TO-262, Through Hole

EBV Elektronik

Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Semicontronic

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon

Mosfet, N-Ch, 100V, 80A, To-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0074Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Rohs Compliant: Yes |Infineon Technologies IPI086N10N3GXKSA1

Newark