Infineon IRF3710ZLPBF

Name: Infineon IRF3710ZLPBF
Brand: Infineon
SKU: IRF3710ZLPBF

Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-262

$ 4.83

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF3710ZLPBF	0	500	Bulk				4.830	4.480	6h
Win Source		WS-IRF3710ZLPBF	1,795	10			6.365	4.244	4.244	4.244	14h
Worldway Electronics		IRF3710ZLPBF	18,558	7	Tube		1.444	1.400	1.326	1.326	3d
SHENGYU ELECTRONICS	2	IRF3710ZLPBF	8,920	1		2.425	2.376	2.300	2.230	2.130	6d
Fly-Wing Technology		IRF3710ZLPBF	2,206			5.235	4.296	4.162	3.893	3.893	4d

数据表和文档

下载 Infineon IRF3710ZLPBF 的数据表和制造商文档。

IHS

Datasheet12 页15 年前

Datasheet13 页15 年前

Newark

iiiC

RS (Formerly Allied Electronics)

DigiKey

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-05-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-11-15

LTD Date2020-05-15

描述

由其分销商提供的 Infineon IRF3710ZLPBF 的描述。

Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-262

Future Electronics

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

Newark