Infineon IPD60R650CEAUMA1

Name: Infineon IPD60R650CEAUMA1
Brand: Infineon
SKU: IPD60R650CEAUMA1

Mosfet, N-Ch, 600V, 9.9A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60R650CEAUMA1

$ 0.38

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Distributor		SKU		Min	Pkg
Newark	2	IPD60R650CEAUMA1	3,540	5	Cut Tape		0.876	0.625	0.625	0.625
Rochester Electronics		IPD60R650CEAUMA1	23,328					0.361	0.299	0.267	16h
DigiKey	2	448-IPD60R650CEAUMA1CT-ND	1,475	1	Cut Tape	1.310	0.821	0.541	0.382	0.382
Avnet		IPD60R650CEAUMA1	0	2500						0.259	3d
Future Electronics	2	IPD60R650CEAUMA1	0	2500	Tape & Reel					0.405

数据表和文档

下载 Infineon IPD60R650CEAUMA1 的数据表和制造商文档。

IHS

Datasheet16 页8 年前

Datasheet16 页0 年前

Infineon

库存历史记录

3 个月趋势:

-3.54%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-09-25

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPD60R650CEAUMA1 的描述。

Mosfet, N-Ch, 600V, 9.9A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60R650CEAUMA1

Newark

Power Field-Effect Transistor, 9.9A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 600V, 9.9A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

element14 APAC

Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

Infineon