Infineon IPN60R2K1CEATMA1

Name: Infineon IPN60R2K1CEATMA1
Brand: Infineon
SKU: IPN60R2K1CEATMA1

Power MOSFET, N Channel, 600 V, 3.7 A, 1.89 ohm, SOT-223, Surface Mount

$ 0.239

NRND

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IPN60R2K1CEATMA1	4,340	1		0.664	0.664	0.664	0.664	0.664
DigiKey	3	IPN60R2K1CEATMA1CT-ND	68,814	1	Cut Tape	0.790	0.492	0.317	0.217	0.162
Rochester Electronics		IPN60R2K1CEATMA1	59								3h
Newark		IPN60R2K1CEATMA1	0	5	Cut Tape		0.518	0.354	0.261	0.261
Avnet		IPN60R2K1CEATMA1	0	3K						0.139	6h

数据表和文档

下载 Infineon IPN60R2K1CEATMA1 的数据表和制造商文档。

IHS

Datasheet13 页0 年前

TME

库存历史记录

3 个月趋势:

+13.99%

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供应链

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-04-29

Lifecycle StatusNRND (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon IPN60R2K1CEATMA1 的描述。

Power MOSFET, N Channel, 600 V, 3.7 A, 1.89 ohm, SOT-223, Surface Mount

EBV Elektronik

Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R

Verical

5W(Tc) 20V 3.5V@ 60¦ÌA 6.7nC@ 10 V 1N 600V 2.1¦¸@ 800mA,10V 3.7A 140pF@100V SOT-223-3

UnikeyIC

MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.89ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer

Infineon