供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-30
Lifecycle StatusProduction (Last Updated: 9 months ago)
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MOSFET N-CH 600V 4.3A TO252-3 N-Channel 600 V 4.3A (Tc) 37W (Tc) Surface Mount PG-TO252-3
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MOSFET N-CH 600V 3.2A TO252-3 N-Channel 600 V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3
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MOSFET N-CH 600V 3.2A TO252-3 N-Channel 600 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-11
描述
由其分销商提供的 STMicroelectronics STD5N60M2 的描述。
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
MOSFET N-Ch 600V 3.5A 45W(Tc) 1.4Ω@1.7A,10V Qg=8.5nC@10V Coss=211pF@100V TO-252 SMD
N-Channel 600 V 3.5 A 1.4 Ohm Surface Mount MDmesh II Plus Mosfet - DPAK
Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)3.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vds)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance211 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max1.4 Ω
Rise Time3 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time11.8 ns