Infineon IPD50N10S3L16ATMA1

Name: Infineon IPD50N10S3L16ATMA1
Brand: Infineon
SKU: IPD50N10S3L16ATMA1

100V, N-Ch, 15 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS

$ 0.981

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价格与库存

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Distributor		SKU		Min	Pkg
Future Electronics		IPD50N10S3L16ATMA1	0	2500	Tape & Reel				1.660
Arrow Electronics		IPD50N10S3L16ATMA1	0	2500					0.807
Farnell	3	IPD50N10S3L16ATMA1	0	5	Cut Tape	2.897*	1.297*	0.942*	0.942*	18h
Verical	3	IPD50N10S3L16ATMA1	148	108				0.758	0.758
Win Source	2	WS-IPD50N10S3L-16	30,000	50			1.061	0.826	0.826	19h

数据表和文档

下载 Infineon IPD50N10S3L16ATMA1 的数据表和制造商文档。

Newark

Datasheet9 页14 年前

IHS

iiiC

库存历史记录

3 个月趋势:

-5.97%

CAD 模型

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供应链

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-02-11

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPD50N10S3L16ATMA1 的描述。

100V, N-Ch, 15 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 50A Automotive 3-Pin(2+Tab) DPAK

Verical

Power Field-Effect Transistor, 50A I(D), 100V, 0.0199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, N CH, 100V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0125oh; Available until stocks are exhausted Alternative available

Farnell

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

Infineon