Infineon IPD30N06S223ATMA2

Name: Infineon IPD30N06S223ATMA2
Brand: Infineon
SKU: IPD30N06S223ATMA2

Mosfet, N-Ch, 30A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD30N06S223ATMA2

$ 0.538

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Distributor		SKU		Min	Pkg
Arrow Electronics		IPD30N06S223ATMA2	2,450	1		0.478	0.478	0.478	0.478	0.478
Rochester Electronics		IPD30N06S223ATMA2	18,153					0.593	0.492	0.439	13h
DigiKey	2	448-IPD30N06S223ATMA2CT-ND	1,941	1	Cut Tape	1.870	1.188	0.797	0.575	0.575
Newark		IPD30N06S223ATMA2	0	1	Cut Tape	1.800	1.260	0.924	0.717	0.717
Avnet		IPD30N06S223ATMA2	0	2500						0.419	15h

数据表和文档

下载 Infineon IPD30N06S223ATMA2 的数据表和制造商文档。

IHS

Datasheet8 页19 年前

iiiC

库存历史记录

3 个月趋势:

-23.16%

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-07-18

Lifecycle StatusProduction (Last Updated: 4 months ago)

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描述

由其分销商提供的 Infineon IPD30N06S223ATMA2 的描述。

Mosfet, N-Ch, 30A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD30N06S223ATMA2

Newark

55V, N-Ch, 23 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon