Infineon IPD048N06L3GBTMA1

Name: Infineon IPD048N06L3GBTMA1
Brand: Infineon
SKU: IPD048N06L3GBTMA1

115W 20V 37NC@ 4.5V 1N 60V 4.8M¦¸@ 10V 6.3NF@ 30V TO-252-3 , 6.5MM*6.22MM*2.3MM

$ 0.547

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价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPD048N06L3GBTMA1	807					0.660	0.547	0.488	22h
Farnell	2	IPD048N06L3GBTMA1	0	1	Cut Tape	1.786*	1.096*	0.821*	0.623*	0.586*	21h
Microchip USA		IPD048N06L3GBTMA1	197	600					3.544	3.544	16h
Verical	2	IPD048N06L3GBTMA1	676	124					0.610	0.610
Win Source	2	WS-IPD048N06L3GBTMA1	18,760	55				1.119	0.866	0.866	23h

数据表和文档

下载 Infineon IPD048N06L3GBTMA1 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-09

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2021-12-31

LTD Date2022-06-30

描述

由其分销商提供的 Infineon IPD048N06L3GBTMA1 的描述。

115W 20V 37nC@ 4.5V 1N 60V 4.8m¦¸@ 10V 6.3nF@ 30V TO-252-3 , 6.5mm*6.22mm*2.3mm

Unikeyic (ICkey)

Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

Mosfet, N-Ch, 60V, 90A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0037Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes

Newark

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Infineon