Infineon IPD100N06S403ATMA2

Name: Infineon IPD100N06S403ATMA2
Brand: Infineon
SKU: IPD100N06S403ATMA2

Power MOSFET, N Channel, 60 V, 100 A, 0.0035 ohm, TO-252 (DPAK), Surface Mount

$ 0.928

NRND

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Newark	IPD100N06S403ATMA2	1,877	1	Cut Tape	0.622	0.622	0.622	0.622	0.622
Arrow Electronics	IPD100N06S403ATMA2	2,500	1		1.842	1.842	1.842	1.842	1.842
Future Electronics	IPD100N06S403ATMA2	2,500	2500	Tape & Reel					0.915
Rutronik	TMOS1452	20,000	2500						1.151	6h
Rochester Electronics	IPD100N06S403ATMA2	347,623					1.080	0.896	0.799	22h

数据表和文档

下载 Infineon IPD100N06S403ATMA2 的数据表和制造商文档。

IHS

Datasheet9 页16 年前

库存历史记录

3 个月趋势:

-5.70%

CAD 模型

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-02-11

Lifecycle StatusNRND (Last Updated: 3 months ago)

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描述

由其分销商提供的 Infineon IPD100N06S403ATMA2 的描述。

Power MOSFET, N Channel, 60 V, 100 A, 0.0035 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

60V, N-Ch, 3.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 100A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, AEC-Q101, N-CH, 60V, 100A, 150W; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs

Farnell

Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Ultra Low RDSon; Ultra High ID | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon