备用零件
Price @ 1000
$ 2.985
$ 3.06
Stock
959,173
2,569,641
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
TO-263
TO-263
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
31.2 A
31.2 A
Threshold Voltage
-
4 V
Rds On Max
110 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
277.8 W
-
Input Capacitance
3.24 nF
-
供应链
Country of OriginAustria, Germany, Malaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-23
Lifecycle StatusProduction (Last Updated: 1 month ago)
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描述
由其分销商提供的 Infineon IPB65R110CFDAATMA1 的描述。
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
N-Channel 650 V 31.2 A 277.8 W 110 mOhm Surface Mount Mosfet - PG-TO-263-3
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
Mosfet, N-Ch, 650V, 31.2A, 0.2778W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IPB65R110CFDAATMA1
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)31.2 A
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.24 nF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation277.8 W
Min Breakdown Voltage650 V
Min Operating Temperature-40 °C
Number of Elements1
On-State Resistance110 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation277.8 W
Rds On Max110 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time68 ns
Turn-On Delay Time16 ns
合规
环境分类
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
合规声明