Infineon IPB083N10N3GATMA1

Name: Infineon IPB083N10N3GATMA1
Brand: Infineon
SKU: IPB083N10N3GATMA1

Power MOSFET, N Channel, 100 V, 80 A, 0.0072 ohm, TO-263 (D2PAK), Surface Mount

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Farnell	3	IPB083N10N3GATMA1	0	1	Cut Tape	2.281*	1.570*	1.395*	0.973*	0.973*	6h
Component Stockers USA		IPB083N10N3GATMA1	6,800			0.650	0.650	1.050	0.670	0.670	>1wk
Weyland Electronics Group Pte. Ltd.		IPB083N10N3G	2,665	1	Tape & Reel	1.645	1.645	1.645	1.645	1.645	1d
Win Source	2	WS-IPB083N10N3G	25,000	55				0.943	0.734	0.734	6h
Worldway Electronics	3	IPB083N10N3 G	18,904	7			0.289	0.280	0.266	0.266	6h

数据表和文档

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IHS

Datasheet12 页12 年前

Factory Futures

Burklin Elektronik

库存历史记录

3 个月趋势:

-100%

CAD 模型

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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-02-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IPB083N10N3GATMA1 的描述。

Power MOSFET, N Channel, 100 V, 80 A, 0.0072 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Win Source

Power Field-Effect Transistor, 80A I(D), 100V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon

MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072oh; Available until stocks are exhausted Alternative available

Farnell