备用零件
Price @ 1000
$ 1.28
$ 0.52
Stock
483,495
165,806
Authorized Distributors
1
1
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
TO-263-3
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
80 A
80 A
Threshold Voltage
-
-
Rds On Max
3.9 mΩ
3.9 mΩ
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
107 W
-
Input Capacitance
3.877 nF
3.877 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-07-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-07-31
LTD Date2010-01-31
描述
由其分销商提供的 Infineon IPB04N03LAG 的描述。
80 A 25 V 0.0064 ohm N-CHANNEL Si POWER MOSFET TO-263AB
Trans MOSFET N-CH 25V 80A 3-Pin TO-263
Power Field-Effect Transistor, 80A I(D), 25V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance6.4 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time5.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.877 nF
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation107 W
Rds On Max3.9 mΩ
Rise Time4.5 ns
Turn-Off Delay Time38 ns
Voltage Rating (DC)25 V