Infineon IPB015N04NGATMA1

Name: Infineon IPB015N04NGATMA1
Brand: Infineon
SKU: IPB015N04NGATMA1

Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK

$ 2.19

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPB015N04NGATMA1	16,502					1.940	1.730	1.630	13h
DigiKey	2	IPB015N04NGATMA1CT-ND	326	1	Cut Tape	5.580	3.709	2.649	2.649	2.649
Farnell		IPB015N04NGATMA1	0	1K					1.828*	1.828*	12h
Verical		IPB015N04NGATMA1	722	155					2.163	2.038
Win Source		WS-IPB015N04N G	1,047	12				3.160	2.833	2.833	14h

数据表和文档

下载 Infineon IPB015N04NGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-95.21%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-04-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IPB015N04NGATMA1 的描述。

Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK

Verical

Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

Infineon

MOSFET, N CH, 120A, 40V, PG-TO263-3; Transistor Polarity:N; Current Id Max:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO263; No. of Pins:3; Transistor Type:Power MOSFET

Farnell