Infineon IPB011N04NGATMA1

Name: Infineon IPB011N04NGATMA1
Brand: Infineon
SKU: IPB011N04NGATMA1

Transistor, Optimos 3 Power Mosfet, N-channel, Normal Level, 40V, 180A, TO263-7

$ 1.77

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	IPB011N04NGATMA1	14,277					1.560	1.390	1.310	12m
RS (Formerly Allied Electronics)	IPB011N04N G	0	1K	Bulk				3.810	3.470	17h
Farnell	IPB011N04NGATMA1	6	1		5.070*	3.393*	3.393*	3.393*	3.393*	1d
Mouser	726-IPB011N04NG	7	1	Tape & Reel	4.410	2.950	2.270	1.770	1.770
Microchip USA	IPB011N04NGATMA1	2,694	600					1.245	1.245	17h

数据表和文档

下载 Infineon IPB011N04NGATMA1 的数据表和制造商文档。

Newark

Datasheet9 页15 年前

_legacy Avnet

iiiC

库存历史记录

3 个月趋势:

-28.74%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-12-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IPB011N04NGATMA1 的描述。

TRANSISTOR, OPTIMOS 3 POWER MOSFET, N-CHANNEL, NORMAL LEVEL, 40V, 180A, TO263-7

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R

Fly-Wing Technology

250W 20V 4V 188nC@ 10V 1N 40V 1.1m¦¸@ 10V 180A 16nF@ 20V TO-263 , 10mm*9.25mm*4.4mm

UnikeyIC

180 A 40 V 0.0011 ohm N-CHANNEL Si POWER MOSFET

Component Stockers USA

Power Field-Effect Transistor, 180A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

Infineon

MOSFET, N CH, 180A, 40V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC