供应链
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-30
Lifecycle StatusNRND (Last Updated: 1 month ago)
LTB Date2020-12-31
LTD Date2021-06-30
相关零件
STMicroelectronicsSTF11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTP11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
描述
由其分销商提供的 Infineon IPA90R800C3XKSA2 的描述。
Power Transistor MOSFET N-Channel Enhancement 900V 6.9A 3-Pin TO-220FP
33W 20V 3.5V 42nC@ 10V 1N 900V 800m¦¸@ 10V 6.9A 1.1nF@ 100V TO-220 10.65mm*4.85mm*16.15mm
Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.9 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.1 nF
Max Operating Temperature150 °C
Max Power Dissipation33 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance800 mΩ
Package Quantity500
Power Dissipation33 W
Rds On Max800 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time400 ns
Turn-On Delay Time70 ns