供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
相关零件
STMicroelectronicsSTF11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTP11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
描述
由其分销商提供的 Infineon SPP06N60C3 的描述。
Trans MOSFET N-CH 650V 6.2A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 6.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Mosfet, N Channel, 650V, 6.2A, To-220-3; Transistor Polarity:n Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:6.2A; On Resistance Rds(On):0.68Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.2 A
Current Rating6.2 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance620 pF
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation74 W
Rds On Max750 mΩ
Rise Time12 ns
Threshold Voltage3 V
Turn-Off Delay Time52 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)650 V