Infineon IKB20N60TATMA1

Name: Infineon IKB20N60TATMA1
Brand: Infineon
SKU: IKB20N60TATMA1

Trans IGBT Chip N-CH 600V 40A 166W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

$ 1.214

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	13T9440	76	1		2.980	1.930	1.330	1.250	1.250	9h
Newark		IKB20N60TATMA1	76	1		0.413	0.413	0.413	0.413	0.413
Arrow Electronics		IKB20N60TATMA1	930	1		2.702	1.824	1.301	1.128	1.128
Rochester Electronics		IKB20N60TATMA1	777					1.450	1.200	1.070	7h
DigiKey	3	IKB20N60TATMA1CT-ND	4,283	1	Cut Tape	3.560	2.318	1.613	1.311	1.311

数据表和文档

下载 Infineon IKB20N60TATMA1 的数据表和制造商文档。

IHS

Datasheet13 页11 年前

Upverter

Farnell

TME

库存历史记录

3 个月趋势:

-5.75%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-20

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IKB20N60TATMA1 的描述。

Trans IGBT Chip N-CH 600V 40A 166W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Verical

IGBT, 20 A, 2.05 V, 166 W, 600 V, TO-263 (D2PAK), 3 Pins

Avnet

Infineon IKB20N60TATMA1 IGBT, 41 A 600 V, 3-Pin PG-TO263-3, Through Hole

TodayComponents

IGBT+ DIODE,600V,20A,TO263; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:166W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:166W

element14 APAC

Hard-switching 600 V, 20 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon