Infineon IGB20N60H3ATMA1

Name: Infineon IGB20N60H3ATMA1
Brand: Infineon
SKU: IGB20N60H3ATMA1

Igbt, 40 A, 1.95 V, 170 W, 600 V, TO-263 (D2PAK), 3 Pins

$ 0.763

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Distributor		SKU		Min	Pkg
Avnet	2	49AC0264	119	1		2.320	1.480	1.010	0.806	0.806	20h
Newark		IGB20N60H3ATMA1	119	1	Cut Tape	0.282	0.282	0.282	0.282	0.282
Arrow Electronics		IGB20N60H3ATMA1	943	1		0.810	0.810	0.810	0.810	0.810
DigiKey	2	IGB20N60H3ATMA1CT-ND	700	1	Cut Tape	2.390	1.530	1.040	0.830	0.830
Farnell	2	IGB20N60H3ATMA1	484	1	Cut Tape	2.994*	1.925*	1.306*	0.956*	0.940*	17h

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IHS

Datasheet14 页0 年前

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库存历史记录

3 个月趋势:

-6.77%

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-08-06

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IGB20N60H3ATMA1 的描述。

IGBT, 40 A, 1.95 V, 170 W, 600 V, TO-263 (D2PAK), 3 Pins

EBV Elektronik

600 V HIGH SPEED IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB

ComSIT Distribution GmbH

High speed 600 V, 20 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Infineon

IGBT, SINGLE, 600V, 40A, TO-263; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 170W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

Farnell

Igbt, 600V, 40A, 175Deg C, 170W; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:170W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IGB20N60H3ATMA1

Newark