Infineon IGB50N60TATMA1

Name: Infineon IGB50N60TATMA1
Brand: Infineon
SKU: IGB50N60TATMA1

Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(2+Tab) D2PAK T/R

$ 2.002

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		IGB50N60TATMA1	70	1	Cut Tape	4.420	2.940	2.150	1.860	1.860
Arrow Electronics		IGB50N60TATMA1	970	1		2.709	2.709	2.709	2.709	2.709
DigiKey	3	IGB50N60TATMA1CT-ND	2,491	1	Cut Tape	5.260	3.491	2.487	2.219	2.219
Future Electronics		IGB50N60TATMA1	0	1K	Tape & Reel				2.630	2.590
Avnet		IGB50N60TATMA1	0	1K					1.934	1.847	3d

数据表和文档

下载 Infineon IGB50N60TATMA1 的数据表和制造商文档。

IHS

Datasheet12 页10 年前

Upverter

库存历史记录

3 个月趋势:

+37.94%

Powered by

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IGB50N60TATMA1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-20

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IGB50N60TATMA1 的描述。

Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(2+Tab) D2PAK T/R

Verical

Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-263AB

IHS

Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3

TodayComponents

IGBT Transistors LOW LOSS IGBT TECH 600V 50A

Future Electronics

IGBT TRENCH 600V 100A TO263-3-2

Vigor Components

100 A 600 V N-CHANNEL IGBT TO-263AB

Component Stockers USA

333W 1.5V 600V 90A TO-263 , 10.25mm*9.9mm*4.4mm

UnikeyIC

IGB50N60T - DISCRETE IGBT WITHOU

DigiKey Marketplace

IGBT,600V,50A,TO263; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:333W

element14 APAC

Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon