Infineon IGW75N65H5XKSA1

Trans IGBT Chip N-CH 650V 120A 395W 3-Pin(3+Tab) TO-247 Tube
$ 2.573
Production
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
NewarkIGW75N65H5XKSA12611
DigiKey448-IGW75N65H5XKSA1-ND2401Tube
Arrow ElectronicsIGW75N65H5XKSA12251
AvnetIGW75N65H5XKSA10240
15h
Future ElectronicsIGW75N65H5XKSA10240Tube

数据表和文档

下载 Infineon IGW75N65H5XKSA1 的数据表和制造商文档。

IHS

Datasheet14 页0 年前

Infineon

Farnell

TME

库存历史记录

3 个月趋势:
-72.77%
Powered bySpectra logo

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IGW75N65H5XKSA1 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
EE Concierge
符号封装
下载 CAD 模型时，合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-05-20
Lifecycle StatusProduction (Last Updated: 1 month ago)

相关零件

STMicroelectronicsSTGW80H65DFB
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
详细信息
STMicroelectronicsSTGW60H65DRF
STGW60H65DRF Series 650 V 120 A Field Stop Trench Gate IGBT - TO-247
详细信息
InfineonIGW30N65L5XKSA1
650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology
详细信息
onsemiFGH50T65UPD
650V, 50A, Field Stop Trench IGBT 650V, 50A, Field Stop Trench IGBT
详细信息
onsemiFGH60N60SMD
FGH60N60SMD Series 600 V 60 A Through Hole Field Stop IGBT - TO-247-3
详细信息
onsemiFGH60N60SFDTU
IGBT 600V 60A 378W TO247 / Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube
详细信息

描述

由其分销商提供的 Infineon IGW75N65H5XKSA1 的描述。

Trans IGBT Chip N-CH 650V 120A 395W 3-Pin(3+Tab) TO-247 Tube
Verical
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Infineon
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 395W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
Farnell
Igbt, Single, 650V, 120A, To-247; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:395W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IGW75N65H5XKSA1
Newark

图片

element14 APAC
Farnell
TME
LZChips
UTSource

制造商别名

Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

零件编号别名

该零件可能有以下备用零件编号：

  • IGW75N65H5
  • SP001257936