供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-10-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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描述
由其分销商提供的 STMicroelectronics STGW60H65DRF 的描述。
STGW60H65DRF Series 650 V 120 A Field Stop Trench Gate IGBT - TO-247
60 A, 650 V field stop trench gate IGBT with Ultrafast diode
Trans IGBT Chip N-CH 650V 120A 420000mW 3-Pin(3+Tab) TO-247 Tube
IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Weight6.500007 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage1.9 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current120 A
Max Operating Temperature150 °C
Max Power Dissipation360 W
Min Operating Temperature-55 °C
Reverse Recovery Time19 ns