Infineon IGW30N65L5XKSA1

Name: Infineon IGW30N65L5XKSA1
Brand: Infineon
SKU: IGW30N65L5XKSA1

650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology

$ 2.176

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Distributor		SKU		Min	Pkg
Newark		IGW30N65L5XKSA1	320	1		5.240	4.560	2.990	2.760	2.760
Rochester Electronics		IGW30N65L5XKSA1	10					1.620	1.450	1.360	6h
Arrow Electronics	2	IGW30N65L5XKSA1	240	1		4.192	2.495	2.094	2.094	2.094
DigiKey		IGW30N65L5XKSA1IN-ND	480	1	Tube	5.650	5.650	3.137	2.176	1.770
Future Electronics		IGW30N65L5XKSA1	0	240	Tube				2.240	2.200

数据表和文档

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IHS

Datasheet14 页0 年前

Datasheet13 页0 年前

库存历史记录

3 个月趋势:

+29.24%

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-12-10

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

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650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology

Future Electronics

Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.10V for 75A IGBT.

Infineon

IGBT, SINGLE, 650V, 85A, TO-247; DC Collector Current: 85A; Collector Emitter Saturation Voltage Vce(on): 1.05V; Power Dissipation Pd: 227W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins

Farnell

Igbt, Single, 650V, 85A, To-247; Continuous Collector Current:85A; Collector Emitter Saturation Voltage:1.05V; Power Dissipation:227W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Infineon Technologies IGW30N65L5XKSA1

Newark