Infineon BSZ100N03MSGATMA1

Name: Infineon BSZ100N03MSGATMA1
Brand: Infineon
SKU: BSZ100N03MSGATMA1

2.1W 16V 1V 8.3NC@ 4.5V, 17NC@ 10V 1N 30V 9.1M¦¸@ 10V 40A 1.3NF@ 15V Son , 3.3MM*3.3MM*1.1MM

$ 0.271

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制造商页面数据表

价格与库存

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非授权经销商

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Distributor		SKU		Min	Pkg
Future Electronics	2	BSZ100N03MSGATMA1	5,000	5K	Tape & Reel					0.300
Rochester Electronics		BSZ100N03MSGATMA1	24,084					0.251	0.208	0.186	5h
DigiKey	2	BSZ100N03MSGATMA1CT-ND	19	1	Cut Tape	1.010	0.629	0.409	0.284	0.259
Newark		BSZ100N03MSGATMA1	0	1	Cut Tape	0.968	0.606	0.393	0.273	0.273
Avnet		BSZ100N03MSGATMA1	0	5K						0.164	7h

数据表和文档

下载 Infineon BSZ100N03MSGATMA1 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

Datasheet11 页4 年前

Farnell

库存历史记录

3 个月趋势:

-2.63%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装	3D	下载

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-10-30

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon BSZ100N03MSGATMA1 的描述。

2.1W 16V 1V 8.3nC@ 4.5V,17nC@ 10V 1N 30V 9.1m¦¸@ 10V 40A 1.3nF@ 15V SON , 3.3mm*3.3mm*1.1mm

Unikeyic (ICkey)

Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R

Win Source

10 A 30 V 0.0114 ohm N-CHANNEL Si POWER MOSFET

Component Stockers USA

Power Field-Effect Transistor, 10A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 30V 10A/40A 8TSDSON

DigiKey

BSZ100N03 - 12V-300V N-CHANNEL P

DigiKey Marketplace

MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon