Infineon BSZ088N03MSGATMA1

Name: Infineon BSZ088N03MSGATMA1
Brand: Infineon
SKU: BSZ088N03MSGATMA1

Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		BSZ088N03MSGATMA1	85,982								20h
Farnell		BSZ088N03MSGATMA1	0	1		1.175*	0.994*	0.717*	0.488*	0.479*	20h
HQonline		DS0080874	25	1		1.074	1.074	1.074	1.074	1.074	>1w
Win Source	2	WS-BSZ088N03MSG	2,248	75				0.704	0.470	0.470	21h
Worldway Electronics		BSZ088N03MSGATMA1	9,209	7	Tape & Reel		0.137	0.133	0.126	0.126	20h

数据表和文档

下载 Infineon BSZ088N03MSGATMA1 的数据表和制造商文档。

_legacy Avnet

Datasheet9 页15 年前

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-11.56%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.75

Introduction Date2007-10-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

描述

由其分销商提供的 Infineon BSZ088N03MSGATMA1 的描述。

Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8

Epart123

MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N; Current Id Max:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON-8; No. of Pins:8; Transistor Type:Power MOSFET

Farnell

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon