Infineon BSC080N03MSGATMA1

Name: Infineon BSC080N03MSGATMA1
Brand: Infineon
SKU: BSC080N03MSGATMA1

Trans Mosfet N-ch 30V 13A 8-PIN Tdson T/r

$ 0.372

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	BSC080N03MSGATMA1	729,044								3h
Farnell	BSC080N03MSGATMA1	0	5			0.572*	0.369*	0.324*	0.309*	15h
Mouser	726-BSC080N03MSG	20,521	1	Tape & Reel	1.280	0.801	0.527	0.372	0.337
Microchip USA	BSC080N03MSGATMA1	383	3K	Tray					0.968	3d
Component Stockers USA	BSC080N03MSGATMA1	42,342			0.700	0.430	0.340	0.250	0.250	>1wk

数据表和文档

下载 Infineon BSC080N03MSGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页13 年前

_legacy Avnet

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-0.67%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-10-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon BSC080N03MSGATMA1 的描述。

Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R

Avnet

13 A 30 V 0.0102 ohm N-CHANNEL Si POWER MOSFET

Component Stockers USA

Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

OptiMOS™3 M-Series Power-MOSFET

Win Source

BSC080N03 - 12V-300V N-CHANNEL P

DigiKey Marketplace

MOSFET, N CH, 53A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon