Infineon BSZ018NE2LSATMA1

Name: Infineon BSZ018NE2LSATMA1
Brand: Infineon
SKU: BSZ018NE2LSATMA1

Trans Mosfet N-ch 25V 23A 8-PIN Tsdson Ep T/r

$ 0.496

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Distributor		SKU		Min	Pkg
Arrow Electronics		BSZ018NE2LSATMA1	9,910	1		0.611	0.611	0.611	0.611	0.611
Rochester Electronics		BSZ018NE2LSATMA1	9,422					0.532	0.441	0.394	8h
DigiKey	3	BSZ018NE2LSATMA1CT-ND	15,421	1	Cut Tape	1.730	1.096	0.732	0.526	0.483
Newark		BSZ018NE2LSATMA1	0	1	Cut Tape	1.520	0.951	0.676	0.496	0.496
Avnet		BSZ018NE2LSATMA1	0	5K						0.381	10h

数据表和文档

下载 Infineon BSZ018NE2LSATMA1 的数据表和制造商文档。

Newark

Datasheet9 页13 年前

Upverter

库存历史记录

3 个月趋势:

+2.93%

CAD 模型

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供应链

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.75

Introduction Date2011-03-30

Lifecycle StatusProduction (Last Updated: 1 year ago)

LTB Date2025-09-30

LTD Date2026-03-31

描述

由其分销商提供的 Infineon BSZ018NE2LSATMA1 的描述。

Trans MOSFET N-CH 25V 23A 8-Pin TSDSON EP T/R

Verical

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Infineon

MOSFET, N CH, 25V, 153A, TSDSON-FL-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;

Farnell

Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:69W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon Technologies BSZ018NE2LSATMA1.

Newark