价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | BSF030NE2LQXUMA1 | 0 | 1 | Cut Tape | 22h | |||||||
| Component Stockers USA | BSF030NE2LQXUMA1 | 11,902 | >1wk | |||||||||
| Weyland Electronics Group Pte. Ltd. | BSF030NE2LQ | 10,000 | 1 | Tape & Reel | 23h | |||||||
| Win Source | WS-BSF030NE2LQ | 15,000 | 8 | 22h | ||||||||
| Worldway Electronics | BSF030NE2LQ | 17,282 | 7 | Tape & Reel | 22h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-31
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-07-15
LTD Date2023-12-15
相关零件
InfineonIRF8252PBF
2.5W(Ta) 20V 2.35V@ 100¦ÌA 53nC@ 4.5 V 1N 25V 2.7m¦¸@ 25A,10V 25A 5.305nF@13V SOIC-8
描述
由其分销商提供的 Infineon BSF030NE2LQXUMA1 的描述。
Trans MOSFET N-CH 25V 24A 6-Pin WDSON T/R
Power Field-Effect Transistor, 75A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSF030NE2LQ Infineon Technologies
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).
MOSFET, N-CH, 25V, 75A, WDSON-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Powe
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Body MaterialMetal
Contact PlatingSilver
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Resistance4.1 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time2.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.7 nF
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Number of Elements1
On-State Resistance3 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation28 W
Rise Time3.4 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time18 ns
Turn-On Delay Time2.8 ns